Ossila molybdenum sulfide selenide (MoSSe) powder, CAS 132004-88-7, is a black, high-purity (≥99.995%) two-dimensional semiconductor from the transition metal dichalcogenide (TMDC) family. It is grown synthetically by chemical vapor transport (CVT) and is mainly used as a starting material for making MoSSe nanosheets and nanoparticles through liquid exfoliation.
MoSSe is known as a Janus TMDC. Each monolayer is built from three atomic planes in the order S-Mo-Se, so one face carries sulfur and the other selenium, unlike MoS2 or MoSe2. Viewed from above the lattice keeps a honeycomb pattern, but the differing electronic character of S and Se breaks mirror symmetry and makes the material polar. Layers stack through van der Waals interactions, and bilayers favour AC-stacking.
This asymmetry gives a strong out-of-plane piezoelectric polarization and a direct bandgap of 2.14 eV. Stacking several Janus layers lets their dipoles add up, making an atomically thin pn-junction possible across the multilayer, while film thickness strongly influences dipole behaviour and electron and hole mobility.
- Preparation of MoSSe nanosheets and nanoparticles by liquid exfoliation.
- Research on piezoelectric devices exploiting the vertical piezoelectric effect of Janus monolayers.
- Design of nanoelectromechanical devices and exploratory spintronics.
- Photocatalyst studies for solar water splitting using mono- and multilayer MoSSe.
- Investigation of Janus MoSSe for lithium-ion battery applications.
| Brand | Ossila |
|---|---|
| CAS number | 132004-88-7 |
| Molecular formula | MoSSe |
| Purity | ≥99.995% |
| Category | — |
| Pack sizes | 1 g |
| Physical form | Powder |
| Storage | — |
- Product code: M2143C1
- Molecular Weight: 206.96 g/mol
- Bandgap: 2.14 eV (direct)
- Preparation: Synthetic - Chemical Vapor Transport (CVT)
- Structure: Hexagonal
- Electronic Properties: 2D Semiconductor
- Color: Black
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