This aluminum nitride (AlN) sputtering target is a 99.8% purity disc, 1'' in size and 0.250'' thick, used as the source material for depositing AlN thin films. Sputtering erodes material from the target and deposits it onto a substrate such as a silicon wafer. The process is repeatable and scales from small R&D work to production batches covering medium to large substrate areas.
AlN combines useful physical, chemical and mechanical properties. Its wide band gap (~6.2 eV), high refractive index (~2.0) and low absorption coefficient (<10−3) make it attractive for optical and optoelectronic devices and sensors, while the thermal and chemical stability of AlN films suits them to demanding environments.
Film properties such as crystal structure, orientation, microstructure and composition depend on deposition conditions, including sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio and sputtering gas pressure. AlN targets perform well in reactive DC magnetron sputtering systems, a common route for growing AlN films thanks to its simplicity, reproducibility and ease of scale-up.
- Thin film deposition of aluminum nitride onto substrates such as silicon wafers.
- Growing AlN films for optical and optoelectronic devices.
- Producing AlN coatings for sensors and devices operating in harsh environments.
- Reactive DC magnetron sputtering in research and production settings.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.8% |
| Category | — |
| Pack sizes | — |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01AL37
- Material: Aluminum Nitride (AlN)
- Size: 1''
- Thickness: 0.250''
- Band gap: ~6.2 eV
- Refractive index: ~2.0
- Recommended method: Reactive DC magnetron sputtering
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