Aluminum nitride (AlN) sputtering targets are ceramic source materials from the nitride ceramics group, which is also known as a wide bandgap compound semiconductor. In a sputtering process, the target is bombarded with energetic ions so that AlN atoms are ejected and deposited as a thin film onto a substrate. Nanografi sputtering targets are intended for laboratory and pilot-scale thin film research.
- Quantity: 1 piece
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- Deposition of piezoelectric AlN thin films for MEMS and acoustic resonator research
- Fabrication of dielectric and passivation layers in microelectronics studies
- Development of thermally conductive coatings and heat-spreading layers
- Optoelectronic and UV device layer research
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