This aluminum oxide (Al2O3) sputtering target has a purity of 99.99%, a size of 2'' and a thickness of 0.125''. It serves as the source material for depositing Al2O3 thin films by sputtering, where material is eroded from the target and deposited onto a substrate such as a silicon wafer. The process is repeatable and can move from small R&D work to production batches covering medium to large substrate areas.
Al2O3 is a compound of aluminium and oxygen valued for its chemical inertness, hardness, mechanical strength, high abrasion and corrosion resistance, high electrical breakdown field and high dielectric constant. Films grown from these targets are also transparent and insulating, making them useful in mechanical, optical and microelectronic work.
Film properties depend on sputtering parameters such as sputtering rate, target-to-substrate distance and reactive gas pressure, giving users a high degree of control over film growth and microstructure.
- Deposition of dielectric layers and insulating films in microelectronics.
- Fabrication of protective coatings with high hardness and abrasion resistance.
- Formation of diffusion barriers and electronic seals.
- Production of optical layers for optoelectronic devices.
- Thin film research in tribology, sensorics and nanolithography.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.99% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01AL52
- Material: Aluminum Oxide (Al2O3)
- Size: 2''
- Thickness: 0.125''
- Product code: NG0ST01AL52
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