This Nanografi bismuth (Bi) sputtering target is a 99.9% pure source for thin film deposition. It measures 4'' in size with a thickness of 0.250'' and is supplied as a single piece. In sputtering, material is eroded from the target and deposited onto a substrate such as a silicon wafer. The method suits small R&D work and can be scaled to batches covering medium to large substrate areas.
Bismuth is a brittle, silvery metal with a pinkish tinge that is stable in air and water. Thin bismuth films are of research interest because this semi-metal becomes a semiconductor at a critical thickness of approximately 30 nm. Bi films can be produced by RF and DC sputtering, as well as pulsed laser deposition and thermal evaporation.
With PVD techniques, the crystal structure and morphology of Bi coatings depend on parameters such as substrate temperature, the potential applied to the target and ion beam energy. In DC sputtering, applying positive pulses between substrate and target can improve film density and mechanical properties.
- Deposition of bismuth thin films on substrates such as silicon wafers by RF or DC sputtering.
- Research on bismuth films that change from semi-metal to semiconductor at a thickness of approximately 30 nm.
- Thin film work related to thermoelectric conversion and devices exploiting large magneto-resistance.
- Preparation of bismuth layers for reference electrodes used to detect heavy metals.
- Sputter etching where high etching anisotropy is needed and selectivity is not a concern.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.9% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BI09
- Material: Bismuth (Bi)
- Size: 4''
- Thickness: 0.250''
- Product code: NG0ST01BI09
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