This bismuth ferrite (BiFeO3) sputtering target has a purity of 99.9%, a size of 6'' and a thickness of 0.250''. It is used to deposit thin films of BiFeO3, a perovskite-structured inorganic compound regarded as one of the most promising multiferroic materials.
Targets of this type are typically produced by sintering or recrystallizing a mixture of bismuth and iron oxides at high temperature, giving a single-phase BiFeO3 material. Indium bonding is recommended for this target.
Bismuth ferrite is a lead-free ferroelectric known for large remnant polarization, a high Curie temperature and a high antiferromagnetic Neel temperature. It may be the only material showing both magnetic and ferroelectric behaviour at and above room temperature. Its direct band gap of 3.3 eV and strong polarization have drawn interest in polarization-induced photovoltaic effects, and well-prepared BiFeO3 films are well suited to ferroelectric photovoltaic research. Sputtering itself is a repeatable process that scales from R&D work to production batches on medium to large substrates.
- Sputter deposition of BiFeO3 thin films onto substrates such as silicon wafers.
- Research on multiferroic materials combining magnetic and ferroelectric properties at room temperature.
- Studies of the ferroelectric photovoltaic effect in bismuth ferrite films.
- Development of lead-free ferroelectric thin-film materials.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.9% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BI31
- Material: Bismuth Ferrite (BiFeO3)
- Size: 6''
- Thickness: 0.250''
- Structure: Perovskite
- Band gap: 3.3 eV (direct)
- Recommended bonding: Indium bonding
- Product code: NG0ST01BI31
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