This Nanografi bismuth oxide (Bi2O3) sputtering target has a purity of 99.9%, a size of 1'' and a thickness of 0.250''. It serves as the source material for depositing Bi2O3 thin films by sputtering, where material is eroded from the target and deposited onto a substrate such as a silicon wafer. Sputter deposition is repeatable, scales from small R&D work to batches covering medium to large substrate areas, and its many process parameters give close control over film growth and microstructure.
Bismuth oxide is valued for its wide energy gap (from 2 to 4 eV), high refractive index, high electric permittivity, photoluminescence and high oxygen ion conductivity at medium and high temperatures. It exists in α, β, γ and δ polymorphs; only the low temperature monoclinic α-phase and the high temperature face-centered cubic δ-phase are stable.
Magnetron sputtering is a common route for this material, offering high deposition rates and dense, strongly adhering films, with access to commercially available large area deposition systems.
- Deposition of bismuth oxide thin films for optoelectronic devices and solar cells.
- Research on electrolyte layers for solid oxide fuel cells (SOFCs).
- Fabrication of oxygen sensors and gas sensors.
- Production of optical layers and ceramic glasses.
- Studies of visible-light photocatalysts for water dissociation and decontamination.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.9% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BI40
- Material: Bismuth Oxide (Bi2O3)
- Size: 1''
- Thickness: 0.250''
- Energy gap: 2 to 4 eV
- Product code: NG0ST01BI40
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