This boron carbide (B4C) sputtering target from Nanografi is a 3'' disc, 0.125'' thick, with a purity of 99.5% and an indium bond. It serves as the source material in sputter deposition systems, where atoms are eroded from the target and deposited as a thin film on a substrate such as a silicon wafer.
Sputtering coats substrates of many shapes and sizes and gives repeatable results. A process developed in small research and development work can be scaled up to production batches covering medium to large substrate areas. Depending on the process parameters, chemical reactions may take place at the target surface, in flight or on the substrate. The number of adjustable parameters gives experienced users close control over film growth and microstructure.
Sputtering is a physical vapor deposition (PVD) method that runs at relatively low coating temperatures. It can produce very thin coatings and can cover sharp edges and complex forms.
- Deposition of thin films onto substrates such as silicon wafers by sputtering.
- Sputter etching where a high degree of etching anisotropy is required and selectivity is not a concern.
- Surface and composition analysis techniques such as secondary ion mass spectrometry (SIMS), where material is sputtered at a constant rate.
- Process development that is scaled from research projects to production batches on medium to large substrate areas.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BO19
- Material: Boron Carbide (B4C)
- Size: 3''
- Thickness: 0.125''
- Bonding: Indium
- Product code: NG0ST01BO19
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