This Nanografi boron carbide (B4C) sputtering target is a 4'' disc, 0.125'' thick, with a purity of 99.5%, offered in the indium version. It serves as the source material for depositing thin films by sputtering, where material is eroded from the target and deposited onto a substrate such as a silicon wafer.
Sputter deposition can coat substrates of many shapes and sizes and gives repeatable results. A process developed at small research and development scale can be scaled up to production batches covering medium to large substrate areas. Depending on the process parameters, chemical reactions may take place on the target surface, in flight or on the substrate. With so many adjustable parameters, experienced users gain fine control over the growth and microstructure of the deposited film.
- Thin film deposition onto substrates such as silicon wafers.
- Sputter etching where high etching anisotropy is required and selectivity is not critical.
- Analytical work in which target material is etched away, as in secondary ion mass spectrometry (SIMS).
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BO20
- Material: Boron Carbide (B4C)
- Variant: Indium
- Size: 4''
- Thickness: 0.125''
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