This Nanografi boron carbide (B4C) sputtering target is a 6'' source with a thickness of 0.250'' and a purity of 99.5%. It is supplied as one piece and serves as the source material in sputter deposition systems for producing thin films.
In sputtering, material is eroded from the target and deposited onto a substrate such as a silicon wafer. The method can coat substrates of many shapes and sizes, gives repeatable results, and scales from small research and development work to production batches covering medium to large substrate areas.
Depending on process parameters, chemical reactions can take place on the target surface, in flight or on the substrate. The large number of adjustable parameters gives experienced users considerable control over film growth and microstructure.
- Deposition of thin films onto substrates such as silicon wafers by sputtering.
- Sputter etching where a high degree of etching anisotropy is required and selectivity is not a concern.
- Material analysis by sputtering away the target, as in secondary ion mass spectrometry (SIMS), to determine composition and detect very low impurity levels.
- Research and development projects that may later be scaled up to production batches.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01BO14
- Material: Boron Carbide (B4C)
- Size: 6''
- Thickness: 0.250''
- Product code: NG0ST01BO14
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