The Ossila E338 is a high-density active area deposition mask, an evaporation mask used to deposit material onto the active area of devices built with Ossila's high-density OFET system. Each substrate carries 20 OFETs, and the E338 version holds 12 substrates of type S221, S223 or S403.
The mask is made of stainless steel and measures 75 mm x 75 mm (2.95" x 2.95"). It is offered for linear channel and interdigitated channel HD OFETs, each with or without a spacer layer. The direct contact version (no spacer) is the better choice for sputtering and other non-directional deposition, and for thermal deposition at oblique angles or with a very short throw, where it gives sharply defined edges. The version with a 100 μm spacer suits standard thermal evaporation, helping to prevent scratches and improving out-gassing.
It works alongside the source-drain and gate masks of the system to build back-gate FETs on Si/SiO2 or other substrates, as well as front-gate FETs. For interdigitated FETs, the matching interdigitated mask versions are used.
- Depositing the active semiconductor layer onto high-density OFET substrates by thermal evaporation.
- Defining the active area by sputtering or other non-directional deposition using the direct contact mask.
- Fabricating back-gate FETs on Si/SiO2 substrates together with the other high-density FET masks.
- Building back-gate or front-gate FETs on any substrate within the Ossila high-density FET system.
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- Product code: E338
- Product code: E338
- Size: 75 mm x 75 mm (2.95" x 2.95")
- Thickness: 1.7mm without spacer, 1.8mm with spacer (exc. bolts)
- Material: Stainless steel
- Substrate capacity: 12 (S221, S223 or S403)
- Number of OFETs: 20 per substrate
- Spacer option: Direct contact (no spacer) or 100 μm spacer
- Channel type variants: Linear Channel HD OFETs, Interdigitated Channel HD OFETs
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