The Ossila High Density Active Area Deposition Mask (E338-SPC) is a stainless steel evaporation mask used to deposit material onto the active area of transistor devices built with Ossila's high-density OFET system. Each substrate carries 20 OFETs, and the E338 mask holds 12 substrates (S221, S223 or S403).
The mask measures 75 mm x 75 mm (2.95" x 2.95"). It is offered in two configurations. The direct-contact version, without a spacer, is 1.7mm thick and gives sharply defined edges with sputtering and other non-directional deposition methods, or with thermal evaporators that have oblique angles or a very short throw. The version with a 100 μm spacer is 1.8mm thick (excluding bolts) and suits standard thermal evaporation, where the gap helps prevent scratching and improves out-gassing.
The mask works together with the source-drain and gate masks of the system to build back-gate FETs on Si/SiO2 or other substrates, as well as front-gate FETs. Interdigitated FET layouts require the matching interdigitated versions of the masks.
- Depositing the active semiconductor layer of OFETs in Ossila's high-density OFET system.
- Thermal evaporation of active layers using the 100 μm spacer version to reduce scratching and aid out-gassing.
- Sputtering or other non-directional deposition using the direct-contact version for well-defined edges.
- Fabrication of back-gate FETs on Si/SiO2 or other substrates and front-gate FETs on any substrate.
| Brand | Ossila |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | — |
| Category | — |
| Pack sizes | — |
| Physical form | — |
| Storage | — |
- Product code: E338-SPC
- Size: 75 mm x 75 mm (2.95" x 2.95")
- Thickness: 1.7mm without spacer, 1.8mm with spacer (exc. bolts)
- Material: Stainless steel
- Substrate capacity: E338: 12 (S221, S223 or S403)
- Number of OFETs: 20 per substrate
- Spacer: 100 μm
—
—