The Ossila Active Area Deposition Mask (E307) is an evaporation mask for placing material precisely into the active area, meaning the source-drain channels, of transistors built on the low density OFET system.
It is offered in two versions. The spacer version carries a 100 μm standoff that keeps the mask off the substrate while preserving good deposition resolution; it is the recommended choice for normal thermal evaporation, as it helps prevent scratching and improves out-gassing. The direct contact version suits sputtering and other non-directional methods, as well as thermal systems with oblique angles or a very short throw, where it gives well-defined edges.
This mask is one of four in the low density fabrication system, alongside the source-drain, gate deposition and insulator deposition masks. Used together, they allow devices in any geometry, including top or bottom gate and top or bottom source-drain layouts.
- Depositing semiconductor or other materials into the source-drain channels of OFET devices.
- Thermal evaporation of active layers using the 100 μm spacer version to avoid substrate scratches.
- Sputtering or other non-directional deposition using the direct contact version for sharp edges.
- Building top-gate or bottom-gate transistors together with the other low density system masks.
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- Product code: E307
- Product code: E307
- Compatible system: 20 mm x 15 mm Low Density FET System
- Variants: With Spacer Layer, No Spacer Layer
- Spacer height: 100 μm
- Deposition area: Active area (source-drain channels)
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