Ossila germanium disulfide (GeS2, CAS 12025-34-2) is a layered group IV metal dichalcogenide supplied as powder (≥99.995% purity) or as bulk crystals (≥99.999% purity). It is an anisotropic 2D semiconductor with a van der Waals structure, studied for electronics, optoelectronics, nanotechnology and energy storage, including solid state batteries.
The crystals are grown synthetically by chemical vapor transport (CVT) and are offered in small (≥10 mm2) and medium (≥25 mm2) sizes; these are typical representative sizes and actual dimensions may vary. Bulk crystals serve as sources for single or few-layer sheets obtained through mechanical or liquid exfoliation. The powder is sold by weight and suits liquid exfoliation, usually sonication-assisted, to make GeS2 nanosheets, nanoparticles, nanoplates and ultrathin films.
Unlike the simple 1T structure of SnS2, GeS2 has tetrahedral coordination built from edge- and corner-sharing [GeS4] units. Exfoliated material shows strong in-plane anisotropy, and nanoflakes of 4.2 nm thickness have been used in polarization-sensitive short-wave photodetectors.
- Preparation of monolayer and few-layer GeS2 by mechanical or liquid exfoliation of crystals.
- Production of GeS2 nanosheets, nanoparticles and few-layer films from powder by liquid exfoliation.
- Research into electrode materials for batteries, including solid state and lithium-sulfur battery anodes and cathodes.
- Infrared optics work such as thermal imaging, night vision, chemical sensors and mid-infrared light delivery.
- Studies of photocatalytic H2 evolution with GeS2 nanoparticles.
- Development of low-energy RRAM devices based on GeS2 thin films.
| Brand | Ossila |
|---|---|
| CAS number | 12025-34-2 |
| Molecular formula | GeS2 |
| Purity | ≥99.995% |
| Category | — |
| Pack sizes | — |
| Physical form | — |
| Storage | — |
- Product code: M2305A10
- Molecular Weight: 136.77 g/mol
- Bandgap: 2.265 eV (monoclinic)
- Preparation: Synthetic - Chemical Vapor Transport (CVT)
- Structure: Monoclinic
- Electronic Properties: 2D semiconductor
- Melting Point: 825 °C (lit.)
- Color: Black
- Synonyms: Germanium(IV) sulfide
- Crystal Purity: ≥99.999%
- Crystal Sizes: Small (≥10 mm2), Medium (≥25 mm2)
- Powder Pack Size: 1 g
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