Ossila Germanium Disulfide (GeS2) Powder and Crystals M2305C1

Ossila germanium disulfide (GeS2, CAS 12025-34-2) is a layered group IV transition metal dichalcogenide supplied as powder (≥99.995% purity) or as bulk crystals (≥99.999% purity). It is an anisotropic 2D semiconductor with a van der Waals structure and a bandgap of 2.265 eV in its monoclinic form, prepared synthetically by chemical vapor transport (CVT).

The crystals serve as sources for single or few-layer GeS2 sheets obtained by mechanical or liquid exfoliation, and are offered in small (≥10 mm²) and medium (≥25 mm²) sizes; areas may vary. The powder suits sonication-assisted liquid exfoliation to make nanosheets, nanoparticles, nanoplates and ultrathin films.

Exfoliated GeS2 shows strong in-plane anisotropy in its electrical, optical and mechanical behaviour. Research interest centres on energy storage, including electrode materials for solid state and lithium-sulfur batteries, along with infrared optics, photocatalysis and low-energy resistive memory.

• Preparation of monolayer and few-layer GeS2 by mechanical or liquid exfoliation of crystals.
• Liquid exfoliation of powder to produce GeS2 nanosheets, nanoparticles and few-layer films.
• Research on electrode materials for batteries, including GeS2/rGO hybrid anodes for lithium-sulfur batteries.
• Polarization-sensitive photodetectors in the short wave region based on exfoliated nanoflakes.
• Infrared optics work such as thermal imaging, chemical sensors and mid-infrared light delivery.
• Thin films for low-energy RRAM devices and nanoparticles for photocatalytic H2 evolution.

• Product code: M2305C1
• M​olecular Weight: 136.77 g/mol
• Bandgap: 2.265 eV (monoclinic)
• Preparation: Synthetic - Chemical Vapor Transport (CVT)
• Structure: Monoclinic
• Electronic Properties: 2D semiconductor
• Melting Point: 825 °C (lit.)
• Color: Black
• Synonyms: Germanium(IV) sulfide
• Crystal P​urity: ≥99.999%
• Crystal Sizes: Small (≥10 mm²) or medium (≥25 mm²)

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