Ossila Indium Oxide Powder (In2O3, CAS 1312-43-2) is a pale yellow, 99.99% pure metal oxide powder with a particle size of ca. 50 nm. Also known as diindium trioxide, indium sesquioxide or indium (III) oxide, it is a semiconductor with a bandgap of around 3 eV, and it serves as the parent material for transparent conducting oxides such as ITO when doped with various metals.
Its electron mobility can reach 100 cm2/V·s, which makes it well suited to high performance field effect transistors. The wide bandgap also gives it high optical transparency, with transmittance of 70–80% and a refractive index of 2.0.
In tandem solar cells, an indium oxide interconnect layer avoids the notable optical losses associated with Ag or Au, raising the EQE of the organic back-cell and improving overall Jsc by approximately 1.5 mA/cm2. In lithium batteries, it helps suppress lithium dendrite growth on the anode, supporting capacity retention above 80% after 600 cycles.
- Channel material for high performance field effect transistors (FETs).
- Interconnect layer in perovskite–organic tandem solar cells with low optical loss.
- Anode surface modification to suppress lithium dendrite growth in lithium batteries.
- Electrochemistry research, including electrochemical CO2 reduction.
- Starting material for doped transparent conducting oxides such as ITO.
| Brand | Ossila |
|---|---|
| CAS number | 1312-43-2 |
| Molecular formula | In2O3 |
| Purity | 99.99% |
| Category | — |
| Pack sizes | 5 g, 10 g, 25 g |
| Physical form | Pale yellow powder |
| Storage | — |
- Product code: M2488A1
- Full Name: Diindium trioxide
- Synonyms: Indium sesquioxide, Indium (III) oxide
- Molecular Weight: 277.64 g/mol
- Melting Point: 1910 °C
- Particle Size: ca. 50 nm
- Bandgap: around 3 eV
- Electron Mobility: up to 100 cm2/V·s
- Transmittance: 70–80%
- Refractive Index: 2.0
An MSDS sheet is available for this product; consult it for safe handling and storage guidance before use.
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