This silicon carbide (SiC) sputtering target, indium, is a 4'' diameter disc with a thickness of 0.125'' and a purity of 99.5%. It serves as the source material in sputter deposition systems, where atoms are eroded from the target and laid down as a thin film on a substrate such as a silicon wafer.
Sputtering is an established route to thin films that works with many materials and with substrates of varied shapes and sizes. The process is repeatable, suits small research and development work, and can be scaled to production batches covering medium to large substrate areas.
Depending on process parameters, chemical reactions may take place at the target surface, in flight or on the substrate. The large number of adjustable parameters makes sputter deposition complex, but it gives experienced users considerable control over film growth and microstructure.
- Deposition of thin films onto substrates such as silicon wafers.
- Sputter etching where high etching anisotropy is required and selectivity is not a concern.
- Materials analysis by etching away target material, as in secondary ion mass spectroscopy (SIMS), to determine composition and detect very low impurity levels.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI64
- Material: Silicon Carbide (SiC)
- Size: 4''
- Thickness: 0.125''
- Bonding: Indium
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