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Silicon Carbide (SiC) Sputtering Targets

Silicon Carbide (SiC) Sputtering Targets
Regular price Rp 17.917.000,00
Regular price Sale price Rp 17.917.000,00
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Silicon carbide (SiC) sputtering targets are solid ceramic compound sources used in physical vapor deposition (PVD). During sputtering, energetic ions bombard the target surface and eject SiC atoms that condense onto a substrate to form thin films. Silicon carbide belongs to the group of advanced ceramics and wide-bandgap semiconductor materials, valued for its hardness, chemical stability, and thermal robustness.

  • Quantity: 1 piece

For technical specifications, Certificate of Analysis (CoA), or quotation, please contact AMI Scientific.

  • Deposition of SiC thin films for power electronics and semiconductor device research
  • Protective and wear-resistant coatings on cutting tools and mechanical components
  • Thin-film layers for MEMS and microsensor development
  • Optical and dielectric coating studies in materials science laboratories

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