This silicon carbide (SiC) sputtering target from Nanografi is a 2'' disc, 0.250'' thick, with a stated purity of 99.5%. It serves as the source material in sputter deposition systems, where atoms eroded from the target build up as a thin SiC film on a substrate such as a silicon wafer.
Sputtering is an established deposition route that coats substrates of many shapes and sizes. Results are repeatable, and a process developed at small research scale can be carried over to production batches covering medium to large substrate areas.
Depending on the process settings, chemical reactions may take place on the target surface, in flight, or on the substrate. The large number of adjustable parameters makes sputtering demanding to run, but it gives experienced users close control over film growth and microstructure.
- Deposition of silicon carbide thin films onto substrates such as silicon wafers.
- Sputter etching where a high degree of etching anisotropy is required and selectivity is not critical.
- Compositional analysis by secondary ion mass spectrometry (SIMS), in which material is sputtered at a constant rate and the removed atoms are identified by mass spectrometry.
- Research on space weathering, the sputtering-driven process that alters the surfaces of airless bodies such as asteroids and the Moon.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI55
- Material: Silicon Carbide (SiC)
- Size: 2''
- Thickness: 0.250''
- Product code: NG0ST01SI55
—
—