This silicon carbide (SiC) sputtering target from Nanografi has a purity of 99.5%, a size of 3'' and a thickness of 0.250''. It serves as the source material in sputter deposition, where material is eroded from the target and laid down as a thin film on a substrate such as a silicon wafer.
Sputtering works with substrates of many shapes and sizes and gives repeatable results. A process developed at small research and development scale can be scaled up to production batches covering medium to large substrate areas. Depending on the process settings, chemical reactions can take place on the target surface, in flight or on the substrate. The number of adjustable parameters makes the technique demanding, but it gives experienced users close control over film growth and microstructure.
- Deposition of thin silicon carbide films onto substrates such as silicon wafers.
- Sputter etching where strong etching anisotropy is required and selectivity is not a concern.
- Material analysis by etching, as in secondary ion mass spectrometry (SIMS), where sputtered atoms are identified and measured to determine composition and detect very low impurity levels.
- Scaling sputter processes from research and development work up to production batches on medium to large substrate areas.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.5% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI57
- Material: Silicon Carbide (SiC)
- Size: 3''
- Thickness: 0.250''
- Product code: NG0ST01SI57
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