Silicon carbide (SiC) sputtering targets are solid ceramic compound sources used in physical vapor deposition to form thin films. SiC belongs to the wide-bandgap semiconductor and advanced ceramics group, valued for its hardness, thermal stability, and electronic properties. During sputtering, energetic ions eject material from the target, which then condenses onto a substrate as a uniform layer.
- Quantity: 1 piece
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- Thin-film deposition for power and high-temperature semiconductor device research
- Protective and wear-resistant coatings studied in materials engineering
- MEMS and sensor component fabrication
- Optical and photonic thin-film development
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