This N-type silicon (Si) sputtering target from Nanografi has a purity of 99.999%, a size of 4'' and a thickness of 0.250''. It serves as the source material in sputter deposition, where atoms are eroded from the target and deposited as a thin film onto a substrate such as a silicon wafer.
Sputtering works with many materials and with substrates of different shapes and sizes. A process developed at research and development scale can be repeated and scaled up to production batches covering medium to large substrate areas. Depending on the process settings, chemical reactions may take place at the target surface, in flight or on the substrate. Because the process has many adjustable parameters, experienced users can closely control film growth and microstructure.
Besides film deposition, sputtering is used for anisotropic sputter etching and for analytical techniques that remove target material at a controlled rate.
- Deposition of silicon thin films onto substrates such as silicon wafers.
- Sputter etching where high etching anisotropy is required and selectivity is not a concern.
- Depth analysis by secondary ion mass spectrometry (SIMS), where sputtered atoms are identified to determine composition and detect trace impurities.
- Research on space weathering processes that alter airless bodies such as asteroids and the Moon.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.999% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI07
- Material: Silicon (Si)
- Type: N-type
- Size: 4''
- Thickness: 0.250''
- Product code: NG0ST01SI07
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