This P-type silicon (Si) sputtering target from Nanografi is a 4'' target with a thickness of 0.250'' and a purity of 99.999%. It serves as the source material in sputter deposition systems, where atoms are eroded from the target and deposited as a thin film onto a substrate such as a silicon wafer.
Sputtering is an established method for coating substrates of many shapes and sizes. The process is repeatable, works for small research and development runs, and can be adapted to production batches covering medium to large substrate areas. Depending on the process parameters, chemical reactions can take place at the target surface, in flight or on the substrate.
Because sputter deposition involves many adjustable parameters, experienced users gain considerable control over film growth and microstructure.
- Deposition of silicon thin films onto substrates such as silicon wafers.
- Sputter etching where high etching anisotropy is required and selectivity is not a concern.
- Material analysis by etching, as in secondary ion mass spectrometry (SIMS), to identify composition and detect very low impurity levels.
- Studies related to space weathering, the process that alters the physical and chemical properties of airless bodies such as asteroids and the Moon.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.999% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI26
- Material: Silicon (Si)
- Type: P-type
- Size: 4''
- Thickness: 0.250''
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