This P-type silicon (Si) sputtering target from Nanografi has a purity of 99.999%, a diameter size of 6'' and a thickness of 0.250''. It serves as the source material in sputter deposition, where material is eroded from the target and laid down as a thin film on a substrate such as a silicon wafer.
Sputtering can coat substrates of many shapes and sizes, and the process is repeatable. Work started at small research and development scale can be scaled up to production batches covering medium to large substrate areas.
Depending on process parameters, chemical reactions may take place at the target surface, in flight or on the substrate. The number of adjustable parameters makes the technique complex, yet it gives experienced users fine control over film growth and microstructure.
- Thin film deposition onto substrates such as silicon wafers.
- Sputter etching where high etching anisotropy is required and selectivity is not a concern.
- Material analysis by etching, as in secondary ion mass spectrometry (SIMS) to determine composition and detect very low impurity levels.
- Scaling processes from research and development to medium and large area production batches.
| Brand | Nanografi |
|---|---|
| CAS number | — |
| Molecular formula | — |
| Purity | 99.999% |
| Category | — |
| Pack sizes | 1 piece |
| Physical form | — |
| Storage | — |
- Product code: NG0ST01SI28
- Material: Silicon (Si)
- Type: P-type
- Size: 6''
- Thickness: 0.250''
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